INFRARED CHIP LEDs mise uw restures 1. AE t HK (h2.0(L) X1.25(W) X1.] 1. Dimensions: 2.0 (L)x1.25 (W)x1.1 (H) mm, A I I} SEN, IS WW (H) MOBS TIT. being ultra small size Bx @ Application @ )\PRARRD PAF YILED CL-170IR-X ] . AD--OID BR. 2. EOE. 1. ID registration for pager 2. Other optical communication Mx ATE /Maximum absolute rating (Ta25C) aos JAB /ittem io /Symbol 2 /Rating SGT /Unit Miniature Surface Mountable ; 3 . HGRR/Power dissipation Pa 80 mw Infrared Chip LED MARE /Forward current Ir 50 mA CL-170l R-X JULZAMIER/Forward pulse current Ire 1* A WAZ EB/Outline drawing = phic oe ve Y EE REWGH/Operation temperature Tor 25~+80 c RFR RW/Storage temperature Tst 30~+85 Cc Cathote mak LED Ge Resin Soldering terminal #1.Dutyit ISLUE f=1KHz *1.Duty ratioS1% Frequency=1KHz MB EEF /Electro-optical characteristics (Ta==25C) hos s TAE/tem ERC | SetE/Conditions | MY | MERI XS) MAL/ ree MAIREE /Forward voltage Ve 1-=20mA |12 /16 | Vv 3O903K/ Reverse current In VacSV | | 100) pA SAIL/Unit: * ~ Jki4M/Tolerance: +01 M-FRBEEE/Conacitance between terminals | Ct V=0V fIMHz | | 13 | | pF AGAREGNE/Response time Tr, TF I-=20mMA ~ | 2/|-/ us BUNRIE/Radiant intensity le Ir=20mA 0.25 | 0.6 | (1.5) |mW/sr HARA ete The following soldering patterns are recommended for C- FRM /Paak wave length Ap Ir=20mMA _ 950 nm renowesonenns: ANON VAABNR/Spectum with of hat vee | AA l=20mA | 45 | | nm UYID-BAKA For reflow sciderng EH : % 1.2 og 12 MIE /Characteristics tF-VE ASE le-le St le-Ta $$tt Ve-Ta Ste IF-VF Characteristics Ir(mA) le(mw/sr) 5 1 Velv) FOR Spectral Distribution le-tf Characteristics Relative je a4 100 40 20 0 10 ir(mA) Ta(C) lemax-Ta St IFmax-Ta Characteristics le=50mA Ta2se 60 Herat so < f 4 3 30 E 20 10 oO 880 900 920 940 960 980 1000 1020 -40 -20 0 20 40 60 80 Ta(C) le-Ta Characteristics 20 64006 6080 VF-Ta Characteristics 'e=20mA