Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6406
2SK2530
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92500TS (KOTO) TA-2182 No.6406–1/4
6.5 2.3 0.5
1.55.5
0.8
7.0
1.2
2.5
5.0
0.85 0.5
1.2
0 to 0.2
2.3 2.3
0.612
4
3
Package Dimensions
unit:mm
2083B
[2SK2530]
Features
· Low ON-resistance.
· Ultrahigh-speed switching.
· Low voltage drive.
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
2092B
[2SK2530]
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
5.0
6.5
0.85
0.7
0.6
1.5
5.5
7.0
0.8
1.6
7.5
0.5
1.2
2.3 0.5
123
4
2.3 2.3
2SK2530
No.6406–2/4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Marking : K2530
Switching Time Test Circuit
PW=10µs
D.C.≤1%
10V
0V
P.G 50Ω
G
S
D
ID=1A
RL=100Ω
VDD=100V
VOUT
2SK2530
VIN
VIN
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
SSD 052V
egatloVecruoS-ot-etaGV
SSG 03±V
)CD(tnerruCniarDI
D2A
)esluP(tnerruCniarDI
PD WP ≤elcycytud,sµ01 ≤%18A
noitapissiDrewoPelbawollAP
D1W
02W
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Tc=25˚C
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
egatloVnwodkaerBecruoS-ot-niarDV
SSD)RB( IDV,Am1= SG 0=052V
egatloVnwodkaerBecruoS-ot-etaGV
SSG)RB( IGV,Aµ001±= SG 0=03±V
tnerruCniarDegatloVetaG-oreZI
SSD VSD V,V052= SG 0=0.1Am
tnerruCegakaeLecruoS-ot-etaGI
SSG VSG V,V52±= SD 0=01±Aµ
egatloVffotuCV
)ffo(SG VSD I,V01= DAm1=0.20.3V
ecnattimdArefsnarTdrawroF|sfy|V
SD I,V01= DA1=3.19.1S
ecnatsiseRetatS-nOecruoS-ot-niarDcitatSR
)no(SD VSG I,V01= DA1=5.10.2 Ω
ecnaticapaCtupnIssiCV
SD zHM1=f,V02=061Fp
ecnaticapaCtuptuOssoCV
SD zHM1=f,V02=04Fp
ecnaticapaCrefsnarTesreveRssrCV
SD zHM1=f,V02=51Fp
emiTyaleDNO-nruTt
d)no(tiucriCtseTdeificepseeS01sn
emiTesiRt
rtiucriCtseTdeificepseeS31sn
emiTyaleDFFO-nruTt
d)ffo(tiucriCtseTdeificepseeS08sn
emiTllaFt
ftiucriCtseTdeificepseeS03sn
egatloVdrawroFedoiDV
DS ISV,A2= SG 0=0.15.1V
emiTyrevoceResreveRedoiDt
rr ISsµ/Aµ001=td/id,A2=09sn
2SK2530
No.6406–3/4
0
ID -- VGS
6.0
5.5
5.0
4.5
4.0
3.5
1.5
1.0
0.5
3.0
2.5
2.0
00 1 3456789102
0
ID -- VDS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
214 810635 97
5.0V
4.0V
VGS=3.5V
IT01567 IT01568
RDS(on) -- VGS
2.0
1.6
2.4
2.8
1.2
0.8
8212141661041820
IT01569
--60
RDS(on) -- Tc
1.2
1.6
2.0
2.4
3.2
2.8
0.8
0.4
040--40 --20 12020 60 80 100 1601400
IT01570
6.0V
8.0V
10.0V
VDS=10V
Tc= --25°C
25°C
75°C
Tc=25°C
ID=1A ID=1A
VGS=10V
Drain Current, I
D
–A
Drain-to-Source Voltage, V
DS
–V
Drain Current, I
D
–A
Gate-to-Source Voltage, V
GS
–V
Gate-to-Source Voltage, V
GS
–V
Static Drain-to-Source
On-State Resistance, R
DS
(on) –Ω
Static Drain-to-Source
On-State Resistance, R
DS
(on) –Ω
Case Temperature, Tc – ˚C
SW Time -- ID
1.0
10
2
5
7
100
3
2
5
7
3
2
1000
3
3
3
23 57
1.00.1 23 5
IT01573
VDD=100V
VGS=10V
td(on)
tr
td(off)
tf
0
Ciss, Coss, Crss -- VDS
2
7
5
1000
3
7
2
5
3
100
10 10 12 14 16 18 20 22 24 26 28 304682
IT01574
f=1MHz
Ciss
Coss
Crss
IF -- VSD
5
7
0.01
2
0.1
1.0
10
3
5
7
2
3
5
7
2
3
0.4 0.6 0.8 1.0 1.2 1.4 1.60.20
IT01572
0.1
1.0
2
2
10
0.01
3
5
7
5
3
7
2
5
3
7
23 57
0.1 23 57
1.0 23 57
100.01 IT01571
75°C
25°C
Tc= --25°C
VDS=10V VGS=0
Tc=75°C
25°C
--25°C
Forward Transfer Admittance, | yfs|–S
Drain Current, I
D
–A
|y
fs
|
-
I
D
Forward Current, I
F
–A
Diode Forward Voltage, VSD –V
Switching Time, SW Time – ns
Drain Current, I
D
–A
Ciss, Coss, Crss – pF
Drain-to-Source Voltage, V
DS
–V
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of September, 2000. Specifications and information herein are
subject to change without notice.
2SK2530
PS No.6406–4/4
A S O
0.1
1.0
5
7
3
2
5
7
3
2
10
5
7
3
2
2
0.01 23 57
1001.0 23 57
10 23 5
IT01575
25
30
20
15
10
5
00 20 40 60 80 100 120 140 160
PD -- Tc
IT01576
DC operation
10ms
1ms
100µs
10µs
Operation in this area
is limited by RDS(on).
1.0
1.2
0.8
0.6
0.4
0.2
00 20 40 60 80 100 120 140 160
PD -- Ta
IT01788
IDP=8A
ID=2A
Drain Current,I
D
–A
Drain-to-Source Voltage, V
DS
–V
Tc=25°C
Single pulse
Allowable Power Dissipation, P
D
–W
Ambient Temperature, Ta – ˚C
Allowable Power Dissipation, P
D
–W
Case Temperature, Tc – ˚C
