DS30367 Rev. 6 - 2 1 of 3 MMBTA28
www.diodes.com ã Diodes Incorporated
MMBTA28
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
·Epitaxial Planar Die Construction
·Ideal for Medium Power Amplification and Switching
·High Current Gain
·Available in Lead Free/RoHS Compliant Version (Note 3)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 12 V
Collector Current - Continuous IC500 mA
Power Dissipation Pd300 mW
Thermal Resistance, Junction to Ambient RqJA 417 °C/W
Operating and Storage and Temperature Range Tj,T
STG -55 to +150 °C
Maximum Ratings @ TA= 25°C unless otherwise specified
A
E
JL
TOP VIEW
M
BC
H
G
D
D
K
C
BE
Mechanical Data
·Case: SOT-23
·Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·Moisture Sensitivity: Level 1 per J-STD-020C
·Terminal Connections: See Diagram
·Terminals: Solderable per MIL-STD-202, Method 208
·Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 2
·Marking (See Page 2): K6R
·Ordering & Date Code Information: See Page 2
·Weight: 0.008 grams (approximate)
Electrical Characteristics @ TA = 25°C unless otherwise specified
Notes: 1. Device mounted on FR-4 PCB, 1.6x1.6x0.06 inch pad layout as shown on Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. No purposefully added lead.
TCUDORPWEN
SOT-23
Dim Min Max
A0.37 0.51
B1.20 1.40
C2.30 2.50
D0.89 1.03
E0.45 0.60
G1.78 2.05
H2.80 3.00
J0.013 0.10
K0.903 1.10
L0.45 0.61
M0.085 0.180
a0°8°
All Dimensions in mm
C
BE
Features
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage V(BR)CBO 80 ¾VIC= 100mAI
E = 0
Emitter-Base Breakdown Voltage V(BR)EBO 12 ¾VIE= 100mAI
C = 0
Collector-Emitter Breakdown Voltage V(BR)CEO 80 ¾VIC= 100mAI
B = 0
Collector Cutoff Current ICBO ¾100 nA VCB = 60V, IE= 0
ICES ¾500 nA VCE = 10V
Emitter Cutoff Current IEBO ¾100 nA VEB = 10V, IC = 0
ON CHARACTERISTICS (Note 2)
DC Current Gain hFE 10,000
10,000 ¾¾
IC = 10mA, VCE = 5.0V
IC = 100mA, VCE = 5.0V
Collector-Emitter Saturation Voltage VCE(SAT) ¾1.5 V IC = 100mA, IB = 100mA
Base-Emitter Saturation Voltage VBE(SAT) ¾2.0 V IC = 100mA, VCE = 5.0V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo 8.0 Typical pF VCB = 10V, f = 1.0MHz, IE = 0
Input Capacitance Cibo 15 Typical pF VEB = 0.5V, f = 1.0MHz, IC = 0
Current Gain-Bandwidth Product fT125 ¾MHz VCE = 5.0V, IC = 10mA,
f = 100MHz