DATA SHEET NEC /- SILICON TRANSISTORS J 2SB805,2SB806 PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SB805 and 2S8806 are designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. po eee EEE EEE EES ST FEATURES PACKAGE DIMENSIONS @ World Standard Miniature Package : SOT --89 in millimeters inches) @ High Cotlector to Emitter Voltage : Vogo > - 120 V (288806), > Vceo >- 100 V (2$8805} @ Complement to NPN type 2801006 and 2SD1007 respectively 1.5261 + rt ABSOLUTE MAXIMUM RATINGS o| Maximurn Voltages and Currents (Tg = 25C) 288805 2SB806 3 I Collector to Base Voltage Vepo 100 120 Vv z ele) 3 ]u 4 Collector to Emitter Voltage Veeco ~100 ~120 Vv St \ Ay g! Emitter to Base Voltage VEBO ~5.0 Vv \ i i Collector Current (DC) te -0.7 A | tH 0.42 40.06 a Coltector Current {Pulse} * 1 4.2 A 0.42 4.0.06-~4 te . ial c . rat 0.470.096 0.41 1882 Maximum Power Dissipation oa wet gt 3.0 Total Power Dissipation at 25 C Ambient Temperature** Pry 2.0 Ww 1. Emitter Maximurn Temperatures 2. Coltector Junction Temperature T; 150 C ; Base SOT-89 Storage Temperature Range Tstg -5 to +180 C - ~ "PW =. 10 ms, duty cycle =50 % **When mounted on ceramic substrate of 16 cm* x0.7 mm ELECTRICAL CHARACTERISTICS (Tg = 25 c) CHARACTERISTIC SYMBOL MIN. TYP, MAX. UNIT TEST CONDITIONS : ~100 nA 2SB805 Vep=--100 V, Ie =0 Collector Cutoff Current icpo bee : 400 nA 258806 Vop e120 V, te =0 Emitter Cutoff Current leBo 100 nA Veg=-5.0V, Io=0 DC Current Gain hREY 45 200 | VeE=-1.0V, Ic=-5.0 mA oe DC Current Gain brED 90 200 400 Vee =-1.0 V, Io=-100 mA wee Collector Saturation Voltage VCE (sat} 0.4 -0.6 v I=~-500 mA, 1p =--5O0 mA vee | Base Saturation Voltage =, VBE (cat) : 09 15 1 Vv I= 500 MA, Ig=50 mA om Base to Emitter Voltage VBE 550 620 650 mV: Voge 10 V, [c=-10 mA Gain Bandwidth Product fT oe 6 MHz VcE=10V, IE=10 mA Output Capacitance Cob } 44 ; pF 5 Vogs-10V, ip =0, f= 1.0 MHz ***Bulsed : PW 350 us, duty cycle =2 % hee Classification 2SB805 KM KL KK MARKING ode seen 2$8806 KR KO KPO hee 90 - 180 135 270 200 400 Document No. TC -1363B (ODNo. TC 84744) Date Putkshed November 1994 M NEC Corporation 1979 Printed in Japan 248 NEC TYPICAL CHARACTERISTICS (Tg = 25 C) Py Total Power Disspation W -mA tc Collector Current hpe-OC Current Gain ne 1000 500 nN a a 100 a i] na 5 TOTAL POWER DISSIPATION vs, AM@IENT TEMPERATURE O.7 mm 16cm? Mounted on Ceramic Substrate 50 100 150 200 250 Tg-Ambient Temperature C COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE < i e 2 5 3 5 oS 2 2 oO 2 ~ 40 8.0 12 16 Voge Callector to Emitter Voltage Vv ~20 Dc CURRENT GAIN vs. COLLECTOR CURRENT Vog=- 10 V Pulsec Base Saturation Voltage V -Coliector Saturation Voltage--V VREsat; VCE(sat} ~2 ~10 100 - 1060 ig--Coltector Current-ma& jo Collector Current -~mA 2SB805,2SB806 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE < Vos $ s 3 0.4 -02 0.3 od Gs Voe~ Collector to Emitter Voltage V COLLECTOR CURRENT vs BASE TO EMITTER VOLTAGE iO Vv VCE Pulsed 200 1900 50 -29 19 O5 a2 OL -04 -O5 -06 OB -O39 Vee Sase to Emitter Yoitage O7 old 11 BASE AND COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT ig-1G-ig Pulsed ~05 02 O1 VCE (sat) -O9t ot 3 -40 300 - 1000 \ ~Collector Current--mA 249 NEC 2SB805,2SB806__ GAIN BANOWIDTH PROQUCT vs. OUTPUT CAPACITANCE vs, EMITTER CURRENT REVERSE VOLTAGE 100 t=10 MHz fy -Gain Bandwidth Product-MHz Cop Output Capacitance pF 1 2 8 10 20 50 100 ig Emitter Current mA wD 2 5 10-20 30 - 100 Vog~ Collector to Base Voltage -V 250