2N5336 TO-39 80 10uA 80 | 30 500 2 12 28 30 500 | 2200 3 34 30.120 2A 2 1.2 18 5A 20 5A 2 2N5337 TO-39 80 10uA 80 | 60 500 2 07 12. 2a 30 500 | 2200 3 34 60 240 2a 2 12 18 5A 40 BA 2 2N5338 TO-39 100 104A 100] 30 500 2 0.7 120 2a 30 500 | 2200 3 RZ 30.120 2A 2 12 18 5A 20 SA 2 2N5339 TO-39 100 10uA 100] 60 500 2 0.7 120 2A 30 500 | 2200 3 34 60 240 2A 2 12 18 SA 40 SA 2 cs9013 TO-105 25 3 64 202 50 1 1.0 250 09 MPSA05 TO.92 60 4 100 60 | 50 10 1 0.25 100 50 100 14 (72) 50 100 1 MPSA06 TO-92 80 4 100 80 |} 50 10 1 0.25 100 50 100 12 (72) 50 100 1 MPS6560 TO92 25 5 100 20 | 35 10 1 0.50 500 } 30 60 10 14 (72) 50 100 1 50 200 500 1 MPS6561 TO-92 20 5 100 20 | 35 10 1 0.50 350 | 30 60 10 14 (72) 50 100 1 50200 350 i Test Conditions: 1. Veo = 20V, Ig = 1A 2. VoE = 10V, Ic = 100 2A, 3. I = 2A, Voc = 40V Ig1 = 'g2 = 100 ma Rg =1k2, f= 1kHz IB1 = 'p2 = 200 mA NPN Transistors DARLINGTON AMPS vi ov v 1 ve vj Cob fT toff | NF Type Case w | we | w | mae V8] ME Ic g Vee | Syst) BEG na) (pF) | (MHz} @ ny (ns) | taB) | Test | Process No. Style Min Min Min Max ) Min Max ~ (mA} (v) Max Min Max m Max | Min) Max m Max | Max . 2N5305 | TO-92 (74) 100 25 | 2,000 20,000 2 5 14 200 10 | 60 2 0s 2N5306 | TO-92 (74) 100 25 | 7,000 70,000 2 5 14 200 10 | 60 2 05 2N5307 | TO-92 (74) 100 40 | 2,000 20,000 2 5 14 200 10 | 60 2 05 2N5308 | TO-92 (74) 100 40 | 7,000 70,000 2 5 14 200 10 | 60 2 05 MPSA12 | T0-92(72)| 20 100 15 | 20,000 1.0 10 05 ces} (ices) MPSA13 | TO-92 (72)! 30 100 30 | 5,000 10 5 15 100 125 10 05 Vces) 10,000 1000S mpsai4 | tos2i72i! 3a, 100 30 | 10,000 10 5 16 190 125 19 05 iVces) 20,000 i005 &%