. - 2N3713 thru 2N3716 nen 26) -392 SILICON NPN POWER TRANSISTORS | 10 AMPERE ... designed for medium-speed switching and amplifier applications. These devices feature: POWER TRANSISTORS SILICON NPN Total Switching Time at 3 A typically 1.15 us 60-80 VOLTS @ Gain Ranges Specified atl Aand3 A 180 WATTS * Low VcE(sat}: typically 0.5V at Ic = 5A and Ig = 0.58 Excellent Safe Operating Areas @ Complement to 2N3789-92 MAXIMUM RATINGS FIGUAE 1 POWER-TEMPERATURE DERATING CURVE 2N3713 2N3714 Rating Symbol! 2N3715 2N3716 Unit Collector-Base Valtage Veg 80 100 Valts Collector-Emitter Vaitage VcEO 6a ao Vales Emitter-Base Voltage Veg 7.0 7.0 Valts a 34 | c Collector Currant le 10 10 Amps r ma Base Current Ig 4.0 4.0 Amps fb Power Dissipation Po 150 150 Watts Thermal Resistance 8c 117 1.17 SCAw L 0 K Operating Junction and Ty and SEATING t Storage Temperature Range Tstq ~65 to +200 9 PLANE , STYLE t: NOTE: 160 PIN 1. JASE 1. OM "QO" IS DIA. 2. EMITTER 140 CASE: COLLECTOR = DIM; Min [MAX | MIN | MA = 100 3 = a0 A 1 3 8 21.08 a & Q 1.03 | 0.039 | 0.043 = 4 4 - 1 2 : 30.40 | 1.177 | 1.197 a 2 a 1.1 0 0 2 . 4 7 10a 125 180 175 200 - Te, CASE TEMPERATURE (C} 11a 4 18 a 1 - - ~[aee7 [ - | 1.080 Safe Area Limits are indicaled by Figures 12.13. Both limits arc appticable and must be observed. Callectar connected ta case. CASE 11-01 {TO-3} 3-26. 2N3713 thru 2N3716 NPN x ; ELECTRICAL CHARACTERISTICS (Te = 25C untess otherwise noted) E : a soe ; I Characteristic Symbol Min Max Unit Y Cnistter-Base Cutoff Current - leno made (Veg ~ 7 Vde) All Types _ 5 7 Collector- Emitter Cutoff Current logy made iVee = 80 Vde. Yee = -1.5 Vde) 2N3713, 2NI7TL5 _ 1 (Veg = 100 Vde. Vpgs -1.5 Vado) 2N3714, 2NI716 1 (Veg = 60 Vde, Vee = -L.5 Vde, Teo = 150C) 2NI3713, 2N2715 _ {0 (Wog 780 Vde. Vae = -1.5 Vde, Te = 150C) 2N3714, 2NITLS _ 10 Collectar-Emitter Sustaining Valtage* YoEO(sus)" Vde {Ie = 200 made, Ig = 0) 2N3713, 2N37L5 60 - 2N37L4, 2N3716 a0 DC Current Gain hee? _ (Ic = LAde. Veg = 2 Vde) 2N3713, 2N3714 25 90 2N3713, 2N3716 50 150 (Ip = 3 Ade. Vopr = 2 Vde) 2N3713, 2N3714 15 _ 2NI715, 2N3716 30 ~ Collector-Emitter Saturation Voltage * Yorrsaty * Vde (fe = 5 Ade, Ip = 0,8 Adc) 2N3713, 2N3714 _ 1.0 2N37T15, 2N3715 0.8 Base-Emitter Saturation Voltage * VBE(sat) * Vde (Ie = 5 Ade, Ip = 0.3 Adc) 2N3713, 2N3714 _ 2.0 2N3715, 2N3716 _ 1.3 Base-Emitter Voltage Vee" Vde (Ie = J Ade, Vee = 2 Vdc) All Types _ 1.5 Small Signal Current Gain Bee _ (Voge = 10 Vde, Ie = 0.5 Ade, = 1 MHz) All Types 4 _ Switching Times (Figure 2) Typ us "6, = 3A, Ip, = lg = 0.5 Adc) ise Time te 0.45 Storage Time ts 0.3 Fall Time & 0.4 Use sweep test to prevent overheating FIGURE 2 ~ TYPICAL SWITCHING TIMES TEST CIRCUIT le = $A, 1, = 1h, = O.5A t ~ 0us Cc ota Rn ~ fee 15 % etsy Qeps OUTY CYCLE = 2% WAVE SHAPE AT POINT A +30 z 9V = 3 Le tiny ole 4.8 ga g ~I1.7ms: ms = 900 2 = 1009 200 a lw Hg RELAYS at 02 03 05 07 10 29 3.0 5.0 = + 52 Ic, COLLECTOR CURRENT (AMPS) T T 3-272N3713 thru 2N3716 NPN FIGURE 3 COLLECTOR CURRENT versus BASE CURRENT 10 10 70 7.0 5.0 2MI713, 23714 ; a $.0 2N3715. 23716 3.0 49 2.0 2.0 1.0 14 07 a? 9.8 as rit i 0.3 0.2 a3 02 a Veg = 24 SE NOTES 1.2 Vee =2 || \ SEE NOTES 1, 21 | T, = 178C 0.1 0.07 asec 0.05 1 Q.t 0.07 0.05 ic, COLLECTOR CURRENT (AMPS) ic, COLLECTOR CURRENT (AMPS! 40C 0.03 9.02 9.03 0.02 / 0.01 0.01 - a1 02 05 10 20 $0 10 20 $0 100 200 Soa Le00 Ol 02 oS to 20 50 Io 2 80 100 200 S00 Lodo lg, BASE CURRENT (mA) Ja. BASE CURRENT (mA) FIGURE 4 BASE CURRENT-VOLTAGE VARIATIONS FIGURE COLLECTOR CURRENT-VOLTAGE VARIATIONS 1000 10 700 509 7 300 5 200 Veg = 2V SEE NOTE 2 3 100 g 2 3 70 s Vou 24 | = 50 = Ty= LSC 5 SEE NOTE 2 2 3 _ 5 30 = g 7 2 oar * S08 wv 70 5.0 6.3 3.0 0.2 2.0 1.0 al 0 0.4 0g 12 1.6 2.0 Q a4 0.8 12 L6 2.0 Vue, BASE-EMITTER VOLTAGE (VOLTS) Yigg, BASE-EMITTER YOLTAGE (VOLTS) NOTE lL. Dotted line indicates metered base current plus the Icno of the transistor aC 17sec. NOTE 2. Pulse tcat: pulse width -, 200 usec, duty cycle a 1.5% 3-28eel | * 5N3713 thru 2N3716 NPN Vee qeety, COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS) Vee jveop SASE EMITTER SATURATION VOLTAGE (VOLTS) Ic, COLLECTOR CURRENT ima) 10 10 0.6 FIGURE 8 COLLECTOR CURRENT versus BASE-EMITTER VOLTAGE FIGURE 6 ~ COLLECTOR-EMITTER SATURATION VOLTAGE VARIATIONS q 4 t t | 3 Mop bee HOC or rt SEE NOTE 2 20 30 50 70 100 200 300 500 700 1000 ig, BASE CURRENT (ma) FIGURE 7 BASE-EMITTER SATURATION VOLTAGE VARIATIONS 25C TT =-407 -~~ 175C { SEE NOTE 2 | 20 30 50 70 100 200 300 500 700 1000 ta, BASE CURRENT tm) FIGURE 9 ~ COLLECTOR CURRENT versus BASE-EMITTER RESISTANCE 100 50 0 20 10 5.0 30 20 1.0 Ic, COLLECTOR CURRENT (mA) as 0.2 SEE NOTE 2 al 02 0 02 04 I 10 10a 1000 10,000 Vue, BASE EMITTER VOLTAGE (YOLTS) Rag, EXTERNAL BASE -EMITTER RESISTANCE (OHMS) 3-29 2000 2000 a3 Vee = Yoeo 20 100,0002N3713 thru 2N3716 NPN FIGURE 10 CURRENT GAIN VARIATIONS 2N3713, 2N3714 T, = UYC = & =z = 3 OL .02 03 0S 07 0.1 0.2 6.3 0.8 0.7 LO 2.0 3.0 5.0 7.0 ld le, COLLECTOR CURRENT (AMPS) 200 }- 2N3715, 2N3716 . z= 150 s z s S100 50 Ol 02 03 05 07 0.1 0.2 0.3 0.5 a7 1.0 2.0 30 5.0 74 10 le, COLLECTOR CURRENT (AMPS) FIGURE 11 CURRENT GAIN BANOWIOTH PRODUCT versus COLLECTOR CURRENT | ! 1 | i tr, CURRENT GAIN BANDWIDTH PRODUCT tic) al a2 0.3 as 07 1.0 2.0 3.0 5.0 le, COLLECTOR CURRENT LAMPS} 3-30ou 2N3713 thru 2N3716 NPN SAFE OPERATING AREAS FIGURE 12 ~ 2N3713, 2N3715 FIGURE 13 2N3714, 2N3716 OC ta Sms OC ta Sms 3 A = 2 = z = 5S 10 5 3 07 3 os 2 0.3 02 at ; 9 U6 20 40 40 $0 60 70 0 1g 20 40 40 50 60 70 30 90 Yee, COLLECTOR-EMITTER VOLTAGE (VOLTS) The Safe Operating Area Curves indicate I,. Vy, limits cant change in these safe areas.) To insure operation belaw below which the device will aot go into secondary break- the maximum T;, the power-temperature derating curve down. Collector load lines for specific circuits must fall must be observed for both steady state and pulse power within the applicable Safe Area to avoid causing a collector- conditions. emitter short. (Duty cycle of the excursions make no signifi- 3-31