Top View
8
1
2
3
45
6
7
D
D
D
DG
S
A
S
S
Device Features
IRF7805QPbF
www.irf.com 1
03/30/11
SO-8
lAdvanced Process Technology
lUltra Low On-Resistance
lN Channel MOSFET
lSurface Mount
lAvailable in Tape & Reel
l150°C Operating Temperature
lLead-Free
Description
These HEXFET® Power MOSFET's in package utilize
the lastest processing techniques to achieve
extremely low on-resistance per silicon area.
Additional features of these HEXFET Power
MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable
device for use in a wide variety of applications.
The efficient SO-8 package provides enhanced
thermal characteristics making it ideal in a variety of
power applications. This surface mount SO-8 can
dramatically reduce board space and is also available
in Tape & Reel.
IRF7805Q
V
DS
30V
R
DS(on)
11m
Ω
Qg 31nC
Qsw 11.5nC
Qoss 36nC
PD – 96114B
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
GS
@ 10V
I
D
@ T
A
= 70°C
GS
@ 10V
A
I
DM
Pulsed Drain Current
c
P
D
@T
A
= 25°C
Power Dissipation
e
W
P
D
@T
A
= 70°C
Power Dissipation
e
Linear Derating Factor W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
R
θJL
Junction-to-Drain Lead
g
––– 20 °C/W
R
θJA
Junction-to-Ambient
eg
––– 50
Max.
13
10
100
± 12
30
-55 to + 150
2.5
0.02
1.6
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IRF7805QPbF
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 300 μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Qoss
Rθ is measured at TJ of approximately 90°C.
Devices are 100% tested to these parameters.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
BV
DSS
Drain-to-Source Breakdown Voltage
h
30 ––– ––– V
R
DS(on)
Static Drain-to-Source On-Resistance
h
––– 9.2 11 mΩ
V
GS(th)
Gate Threshold Voltage
h
1.0 ––– 3.0 V
I
DSS
Drain-to-Source Leakage Current ––– ––– 70
––– ––– 10
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
Q
g
Total Gate Charge ––– 22 31
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 3.7 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 1.4 –––
Q
gd
Gate-to-Drain Charge ––– 6.8 –––
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 8.2 11.5
Q
oss
Output Charge ––– 3.0 3.6 nC
R
G
Gate Resistance 0.5
–––
1.7
Ω
t
d(on)
Turn-On Delay Time ––– 16 –––
t
r
Rise Time –––20–––
t
d(off)
Turn-Off Delay Time ––– 38 –––
t
f
Fall Time –––16–––
Diode Characteristics
Parameter
Min.
Typ.
Max.
Units
I
S
Continuous Source Current 2.5
(Body Diode)
c
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
h
––– ––– 1.2 V
Q
rr
Reverse Recovery Charge
f
88
Q
rr(s)
Reverse Recovery Charge 55
(with Parallel Schottky)
f
Conditions
V
GS
= 0V, I
D
= 250μA
V
GS
= 4.5V, I
D
= 7.0A
d
V
DS
= 16V
V
GS
= 12V
V
GS
= -12V
V
GS
= 5.0V
V
DS
= 30V, V
GS
= 0V
MOSFET symbol
V
DS
= 16V, V
GS
= 0V
V
DD
= 16V, V
GS
= 4.5V
e
I
D
= 7.0A
Conditions
Resistive Load
I
D
= 7.0A
V
DS
= V
GS
, I
D
= 250μA
R
G
= 2Ω
V
DS
= 24V, V
GS
= 0V, T
J
= 100°C
V
DS
= 24V, V
GS
= 0V
––– –––
V
DS
= 16V, V
GS
= 0V, I
S
= 7.0A
V
DS
= 16V, V
GS
= 0V, I
S
= 7.0A
di/dt = 700A/μs
di/dt = 700A/μs (with 10BQ040)
T
J
= 25°C, I
S
= 7.0A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
μA
nC
ns
A
nA
ns
nC
––– –––
–––
106
–––
––– –––
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IRF7805QPbF
Fig 3. Typical Rds(on) vs. Gate-to-Source Voltage
Fig 2. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 1. Normalized On-Resistance vs. Temperature
Typical Characteristics
0.1
1
10
0.4 0.5 0.6 0.7 0.8 0.9
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
Fig 4. Typical Source-Drain Diode Forward Voltage
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Figure 5. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7805QPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BAS IC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BAS IC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MI N MAX
MILLIMETERSINCHES
MI N MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] C A B
e1
A
A1
8X b
C
0.10 [.004]
4312
F OOT P R I N T
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OU T L I NE CONF OR MS T O JE DE C OU T L I NE MS -012AA.
NOT ES :
1. DIMENS IONING & TOL ERANCING PER ASME Y14.5M-1994.
2. CONT ROL LING DIME NS ION: MILLIMET E R
3. DIMENS IONS ARE S HOWN IN MILL IMET E RS [INCHE S ].
5 DIMENS ION DOE S NOT INCLU DE MOLD PR OT RU S IONS .
6 DIMENS ION DOE S NOT INCLU DE MOLD PR OT RU S IONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A S UBSTRAT E.
MOLD PROTRUS IONS NOT TO EXCEE D 0.15 [.006].
8X 1.78 [.070]
DAT E CODE (YWW)
XXXX
INTERNATIONAL
RECTIFIER
LOGO
F 7101
Y = LAST DIGIT OF THE YEAR
PART NUMBER
LOT CODE
WW = WE EK
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
A = ASSEMBLY SITE CODE
Notes:
1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com 5
IRF7805QPbF
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/2011
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.